Publications
- Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
- Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
- Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
- Negative Capacitance Transistor with Two-Dimensional Channel Material (Molybdenum disulfide, MoS2)
- Experimental understanding of polarization switching in PZT ferroelectric capacitor
