Publications
- Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack
- Study of Line Edge Roughness on Various Types of Gate-All-Around Field Effect Transistor
- Study of work-function variation in stacked multiple-channel-structure device
- Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
- Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
