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138 The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type Ge FinFET performances 고은아 2019.02.27 31481
137 Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate 윤찬근 2020.08.06 24880
136 Adjusting the operating voltage of an nanoelectromechanical relay using negative capacitance 고은아 2019.02.27 17752
135 Atomic Layer Deposition of TiO 2 using Titanium Isopropoxide and H 2 O: Operational Principle of Equipment and Parameter Setting [2] 고은아 2019.02.27 15321
134 Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM 고은아 2019.08.23 13841
133 Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector 고은아 2019.02.27 13133
132 Highly scalable NAND flash memory cell design embracing backside charge storage 고은아 2019.02.27 11893
131 Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor 김권 2021.10.17 11639
130 Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure 고은아 2019.02.27 10968
129 Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices 고은아 2019.02.27 9983
128 Study of Line Edge Roughness on Various Types of Gate-All-Around Field Effect Transistor 고은아 2019.11.29 9486
127 Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V 고은아 2019.02.27 8824
126 Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor 고은아 2019.02.27 8391
125 Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation 고은아 2019.02.27 7858
124 Impact of Source/Drain metal work function on the electrical characteristics of anatase TiO2-based thin film transistors 고은아 2019.02.27 7032
123 Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system 윤찬근 2020.11.17 6931
122 Sub-60-mV/decade negative capacitance FinFET with sub-10-nm hafnium-based ferroelectric capacitor 고은아 2019.02.27 6830
121 Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium 고은아 2019.02.27 6793
120 Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device 고은아 2019.02.27 6518
119 Negative Capacitance Transistor with Two-Dimensional Channel Material (Molybdenum disulfide, MoS2) 고은아 2019.08.23 6177
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